|
单晶
|
掺杂
|
导电
类型
|
载流子浓度cm-3
|
位错密
度cm-2
|
生长方法
尺寸
|
标准
基片
|
|
GaSb
|
None
None high R
Zn
Te
Te high R
|
P
P-
P+
N
N
|
1~2×1017
1~5×1016
1~5×1018
2~6×1017
1~5×1016
|
＜103
|
LEC
Φ3″
|
Φ3″×0.5
Φ2″×0.5
|
|
Typical Electrical Properties
|
|
Dopant available
|
Te
|
Zn
|
Undoped
|
|
Type of conductivity
|
N
|
P
|
P
|
|
Concentration ( cm -3 )
|
1E17 - 5E18
|
2E17 - 4E18
|
x
|
|
Hall Mobility ( cm 2 / v.s. )
|
2500 - 3500
|
200 - 500
|
600 - 700
|
|
|
|
|
Standard Specifications
|
|
Growth method
|
LEC
|
|
Diameter ( mm )
|
50.8
|
|
Thickness ( um )
|
500 +/-25 um
|
|
Conductivity
|
Semi-conducting
|
|
Orientation
|
<100> , <111> , <110>
|
|
Off orientation
|
From 2° to 10° off
|
|
Flat options
|
EJ or US SEMI. Std .
|
|
Surface finish
|
One side or two sides polished
|
|
EPD ( cm-2)
|
< 1000 or < 10000
|
|
Grade
|
Epi polished grade , mechanical grade
|
|
Package method
|
Single wafer container with outer foil bag
|
|