光电二极管_光电探测器相关信息_杭州新势力光电技术有限公司

杭州新势力光电技术有限公司

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您现在的位置：杭州新势力光电技术有限公司 > 供应信息

光电二极管

价格：面议

有效期：长期有效

所在地：浙江省杭州市

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供应数量：不限

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该公司共有 3条同类“光电探测器”信息查看全部>>

详细说明

光电二极管(PIN) 新势力光电供应光电二极管(PIN)，用于将光信号转换为电信号，形成光电效应/光电池。PIN 光电二极管应用广泛，包括：安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天。 UV/blue sensitive photodiodes Type No. Active area Dark current Rise time Chip Package Size Area 5V 410nm 5V 50Ω mm mm2 nA ns PS1-2 TO52 1.0x1.0 1 0.01 50 PS1-2 LCC6.1 1.0x1.0 1 0.01 50 PC5-2 TO5 ? 2.52 5 0.3 150 PS7-2 TO5 2.66x2.66 7 0.4 200 PC10-2 TO5 ? 3.57 10 1 300 PS13-2 TO5 3.5x3.5 13 1 300 PS33-2 TO8 5.7x5.7 33 2 600 PC50-2 BNC ? 7.98 50 5 1000 PS100-2 BNC 10x10 100 10 2000 PS100-2 CERpin 10x10 100 10 2000 Band pass filter modules: PC10-2 TO5i with center wavelength 254nm or 300nm or 350nm Blue/green sensitive photodiodes Type No. Active area Dark current Rise time Chip Package Size Area 5V 410nm 5V 50Ω mm mm2 nA ns PC1-6b TO52S3 ? 1.13 1 0.05 10 PC5-6b TO5 ? 2.52 5 0.1 20 PS7-6b TO5 2.7x2.7 7 0.15 25 PC10-6b TO5 ? 3.57 10 0.2 45 PS13-6b TO5 3.5x3.5 13 0.25 50 PS33-6b TO8 5.7x5.7 33 0.6 140 PS100-6b CERpin 10x10 100 1 200 PS100-6b LCC10S 10x10 100 1 200 Band pass filter modules: PR20-6b TO5i with center wavelength 488nm or 550nm or 633nm or 680nm High speed photodiodes (for fast rise times at low reverse voltages) Type No. Active area Dark current Rise time Chip Package Size Area 20V 850nm 20V 50Ω mm mm2 nA ns PS0.25-5 LCC6.1 0.5x0.5 0.25 0.1 0.4 PS0.25-5 TO52S3 0.5x0.5 0.25 0.1 0.4 PC0.55-5 TO52S1 ? 0.84 0.55 0.2 1 PC0.55-5 LCC6.1 ? 0.84 0.55 0.2 1 PS1-5 LCC6.1 1.0x1.0 1 0.2 1.5 PS1-5 TO52S3 1.0x1.0 1 0.2 1.5 PS7-5 TO5 2.7x2.7 7 0.5 2 PS11.9-5 TO5 3.45x3.45 11.9 1 3 PC20-5 TO8 ? 5.05 20 2 3.5 PS33-5 TO8 5.7x5.7 33 2 3.5 PS100-5 CERpinS 10x10 100 2 5 PS100-5 LCC10S 10x10 100 2 5 High speed photodiodes for low voltages (for low operating voltages between 3 and 5 V, making them ideal for VIS and NIR applications in conjunction with CMOS components) Type No. Active area Dark current Rise time Chip Package Size Area 20V 850nm 20V 50Ω mm mm2 nA ns PS0.25-5t LCC6.1 0.5x0.5 0.25 1 0.4 PC0.55-5t LCC6.1 ? 0.84 0.55 5 1 PC0.55-5t T1 3/4 ? 0.84 0.55 5 1 PC0.55-5t T1 3/4 black ? 0.84 0.55 5 1 PS1-5t LCC6.1 1.0x1.0 1 1 1 IR photodiodes with min. dark current (for low-capacitance light detection as well as for α, β, ? and X-radiation detection) Type No. Active area Dark current Rise time Chip Package Size Area 10V 850nm 10V 50Ω mm mm2 nA ns PC1-6 TO52S1 ? 1.13 1 0.05 10 PC1-6 TO52S3 ? 1.13 1 0.05 10 PC5-6 TO5 ? 2.52 5 0.1 13 PS7-6 TO5 2.66×2.66 7 0.1 15 PC10-6 TO5 ? 3.57 10 0.2 20 PS13-6 TO5 3.5×3.5 13 0.2 20 PC20-6 TO8 ? 5.05 20 0.3 25 PC50-6 TO8S ? 7.98 50 0.5 30 PS100-6 BNC 10×10 100 0.8 50 PS100-6 CERpinS 10×10 100 0.8 50 PS100-6 LCC10S 10×10 100 0.8 50 IR photodiodes with fully depletable (very low capacitance levels) Type No. Active area Dark current Rise time Chip Package Size Area 10V 905nm 10V 50Ω mm mm2 nA ns PC5-7 TO8i ? 2.52 5 0.05 45 PC10-7 TO8i ? 3.57 10 0.1 50 PC20-7 TO8Si ? 5.05 20 0.2 50 PS100-7 LCC10 10×10 100 1.5 50 QP100-7 LCC10 10×10 4×25 0.5 50 Photodiodes for 1064nm (specifically for laser rangefinders, laser-based targeting systems or any applications using YAG lasers or similar NIR radiation sources) Type No. Active area Dark current Rise time Chip Package Size Area 150V 1064nm 150V 50Ω mm mm2 nA ns QP22-Q TO8S ? 5.3 4×5.7 1.5 5 QP45-Q TO8S 6.7×6.7 4×10.96 3 5 QP154-Q TO1032i ? 14.0 4×38.5 10 6 PIN Series Optimized for Special features Application Series-2 200-500 nm UV / Blue enhanced Analytical instruments, readout for scintillators Series-6b 400-650 nm Blue / Green enhanced Photometric illuminometer Series-5b 360-550 nm High-speed Epitaxy, blue / green enhanced Optical fiber communication, high speed photometry Series-5t 400-850 nm High-speed Epitaxy, low voltage (3.5V) Series-5 450-950 nm High-speed Epitaxy Series-6 700-950 nm General purpose, low dark current, fast response Precision photometry, analytical instruments Series-7 700-1100 nm Low capacity, full depletable High energy physics Series-Q 900-1100 nm Enhanced NIR sensitivity, low voltage, full depletable YAG laser detection Series-i 600-1700 nm InGaAs photodiodes, high IR sensitivity, low dark current Eye-sate laser detection Series-X Ionizing radiation With or without scintillator, ultra Medical, security, material www.NewOpto.com 相关商品光电管放大器雪崩二极管(APD) Semrock滤光片紫外LED

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杭州新势力光电技术有限公司   地址：中国浙江省杭州市西湖区西溪世纪中心2号楼828室   邮政编码：310013
联系人：新势力光电   电话：0571-85152711   手机：15355057810   传真：0571-85152722
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